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參數資料
| 型號： | PHB95N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數： | 15/15頁 |
| 文件大?。?/td> | 304K |
| 代理商： | PHB95N03LT |
Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 02 February 2001
Document order number: 9397 750 07814
Contents
Philips Semiconductors
PHP95N03LT series
N-channel TrenchMOS transistor
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information
. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data
. . . . . . . . . . . . . . . . . . . . . 2
Limiting values
. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics
. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance. . . . . . . . . . . . . . 4
Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline
. . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status
. . . . . . . . . . . . . . . . . . . . . . . 13
Definitions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
相關PDF資料 |
PDF描述 |
|---|---|
| PHE95N03LT | N-channel TrenchMOS transistor |
| PHP96NQ03LT | Turret Lug, for 2.4mm panel thickness |
| PHB96NQ03LT | N-channel enhancement mode field-effect transistor |
| PHD96NQ03LT | N-channel enhancement mode field-effect transistor |
| PHP9N60E | PowerMOS transistors Avalanche energy rated |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHB95N03LTA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 22V V(BR)DSS | 75A I(D) | TO-263AB |
| PHB95NQ04LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHB95NQ04LT,118 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB96NQ03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHB96NQ03LT,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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