- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382391 > PHB9N60E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號(hào)： | PHB9N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 102K |
| 代理商： | PHB9N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHB9N60E, PHW9N60E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
9
A
T
mb
= 25C
-
-
36
A
I
S
= 9 A; V
GS
= 0 V
I
S
= 9 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
740
9
December 1998
3
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHW9N60E | GT 10C 10#16 SKT PLUG RTANG |
| PHB9NQ20T | N-channel TrenchMOS transistor |
| PHC20306 | Complementary enhancement mode MOS transistor |
| PHC20512 | Complementary enhancement mode MOS transistors |
| PHD18NQ10T | N-channel TrenchMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB9NQ20T | 制造商:PHILIPS-SEMI 功能描述: |
| PHBL-1 | 制造商:Mid Atlantic 功能描述:Blank Panels, Black Brushed And Anodized Finish |
| PHBL-2 | 制造商:Middle Atlantic Products 功能描述: |
| PHBL3-RP15 | 制造商:Middle Atlantic Products 功能描述: |
| PHBL4-RP15 | 制造商:Middle Atlantic Products 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。