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參數資料
| 型號： | PHB9N60E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 9 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SOT-404, 3 PIN |
| 文件頁數： | 8/9頁 |
| 文件大?。?/td> | 102K |
| 代理商： | PHB9N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHB9N60E, PHW9N60E
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.21. SOT429; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
5.3
4.0
max
21
max
15.5
min
1
2.2 max
3.2 max
0.4
2.5
0.9 max
5.3 max
3.5
16 max
5.45
seating
plane
5.45
M
o
15.5
max
2
3
1.1
3.5
max
1.8
7.3
December 1998
8
Rev 1.000
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