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參數資料
型號: PHD21N06LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor Logic level FET
中文描述: 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, DPAK-3
文件頁數: 2/11頁
文件大小: 112K
代理商: PHD21N06LT
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP21N06LT, PHB21N06LT
PHD21N06LT
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 9.7 A;
t
p
= 100
μ
s; T
j
prior to avalanche = 25C;
V
25 V; R
GS
= 50
; V
GS
= 5 V; refer to
fig:15
MIN.
-
MAX.
34
UNIT
mJ
I
AS
Peak non-repetitive
avalanche current
-
19
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
TYP.
-
MAX.
2.7
UNIT
K/W
SOT78 package, in free air
SOT428 and SOT404 package, pcb
mounted, minimum footprint
60
50
-
-
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
1.0
0.5
-
-
-
-
5
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2.0
-
-
-
2.3
55
70
60
75
-
158
13
-
10
100
0.05
10
-
500
9.4
-
2.2
-
5.4
-
7
15
88
120
25
40
25
45
3.5
-
4.5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
= 10 A
V
GS
= 5 V; I
D
= 10 A
m
m
m
S
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
T
j
= 175C
g
fs
I
GSS
I
DSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DS
= 25 V; I
D
= 10 A
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 20 A; V
DD
= 44 V; V
GS
= 5 V
V
DD
= 30 V; R
D
= 1.2
;
R
= 10
; V
GS
= 5 V
Resistive load
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
466
95
71
650
135
85
pF
pF
pF
August 1999
2
Rev 1.500
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相關代理商/技術參數
參數描述
PHD21N06LT /T3 功能描述:兩極晶體管 - BJT TRENCH-55 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHD21N06LT,118 功能描述:兩極晶體管 - BJT TRENCH-55 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHD22NQ20T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS?? standard level FET
PHD22NQ20T /T3 功能描述:兩極晶體管 - BJT RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHD22NQ20T,118 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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