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參數資料
| 型號： | PHD66NQ03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Turret Lug, for 3.2mm panel thickness |
| 中文描述： | 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, TO-252, DPAK-3 |
| 文件頁數： | 2/14頁 |
| 文件大小： | 301K |
| 代理商： | PHD66NQ03LT |
Philips Semiconductors
PHP/PHB/PHD66NQ03LT
N-channel TrenchMOS transistor
Product data
Rev. 02 — 10 December 2001
2 of 14
9397 750 09119
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
Quick reference data
Conditions
25
°
C
≤
T
j
≤
175
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
Typ
-
-
-
-
-
9.1
12.3
Max
25
66
57
93
175
12
16
Unit
V
A
A
W
°
C
m
m
P
tot
T
j
R
DSon
total power dissipation
junction temperature
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°
C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
peak gate-source voltage
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
Max
25
25
±
15
±
20
Unit
V
V
V
V
t
p
≤
50
μ
s; pulsed;
duty cycle 25%; T
j
≤
150
°
C
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 100
°
C; V
GS
= 10 V
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
D
drain current (DC)
-
-
-
-
-
-
55
55
57
40
66
45
228
93
+175
+175
A
A
A
A
A
W
°
C
°
C
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C
-
-
57
228
A
A
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