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參數資料
| 型號： | PHE95N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LOW PROFILE TO-220AB, I2PAK-3 |
| 文件頁數： | 4/15頁 |
| 文件大小： | 304K |
| 代理商： | PHE95N03LT |
Philips Semiconductors
PHP95N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 02 February 2001
4 of 15
9397 750 07814
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol Parameter
R
th(j-mb)
thermal resistance from junction to mounting
base
R
th(j-a)
thermal resistance from junction to ambient
Thermal characteristics
Conditions
Figure 4
Value
1.2
Unit
K/W
vertical in still air; SOT78 package
vertical in still air; SOT226 package
mounted on a printed circuit board; minimum
footprint; SOT404 and SOT226 packages
60
65
50
K/W
K/W
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ad76
10-3
10-2
10-1
1
10
10-5
10-4
10-3
10-2
10-1
1
10
t
p
(s)
Z
th(j-sp)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
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