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參數資料
| 型號： | PHE95N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LOW PROFILE TO-220AB, I2PAK-3 |
| 文件頁數： | 7/15頁 |
| 文件大小： | 304K |
| 代理商： | PHE95N03LT |
Philips Semiconductors
PHP95N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 02 February 2001
7 of 15
9397 750 07814
Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 11. Forward transconductance as a function of
drain current; typical values.
V
GS
= 0 V; f = 1 MHz
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
Tj (oC)
180
max
typ
min
VGS(th)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
ID
VGS (V)
10-6
10-5
10-4
10-3
10-2
10-1
(A)
03aa81
0
15
30
45
60
75
90
g
fs
(S)
0
15
30
45
60
75
I
D
(A)
T
j
= 25 oC
175 oC
V
DS
> I
D
x R
DSon
03aD83
102
103
104
10-1
1
10
102
V
DS
(V)
C
iss
,
C
oss
,
C
rss
(pF)
C
iss
C
oss
C
rss
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