欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: PHP3055E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS transistor
中文描述: 10.3 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數: 8/10頁
文件大小: 103K
代理商: PHP3055E
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHP3055E PHD3055E
MECHANICAL DATA
Fig.17. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT428
98-04-07
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
D1
w
A
M
b
c
b1
L1
L
1
3
2
D
E1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
max.
b
D1
max.
E
max.
HE
max.
w
y
max.
A2
b2
b1
max.
c
E1
e
e1
L1
min.
L2
L
A
max.
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.89
0.71
0.89
0.71
1.1
0.9
5.36
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.7
0.5
6.73
6.47
4.0
2.95
2.55
August 1999
8
Rev 1.200
相關PDF資料
PDF描述
PHP32N06L N-channel enhancement mode field effect transistor
PHP32N06LT N-channel enhancement mode field effect transistor
PHP36N06E PowerMOS transistor
PHP3N20E PowerMOS transistor
PHP3N20L PowerMOS transistor Logic level FET
相關代理商/技術參數
參數描述
PHP3055E,127 功能描述:MOSFET RAIL PWRMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP3055L 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET
PHP3055L/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR MOSFET TO-220
PHP30NQ15T 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP30NQ15T,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
主站蜘蛛池模板: 礼泉县| 安泽县| 怀仁县| 乌鲁木齐市| 大荔县| 林芝县| 沧州市| 黄大仙区| 沭阳县| 四子王旗| 乌什县| 广河县| 木里| 滨海县| 万源市| 喀喇| 广宗县| 广灵县| 威海市| 本溪| 合阳县| 治多县| 抚州市| 万载县| 武冈市| 什邡市| 开鲁县| 琼结县| 集安市| 泉州市| 鹤山市| 东乡族自治县| 阳朔县| 皮山县| 南澳县| 鄢陵县| 西峡县| 涪陵区| 南开区| 广河县| 石棉县|