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參數資料
| 型號： | PHP32N06L |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode field effect transistor |
| 中文描述： | N溝道增強型場效應管 |
| 文件頁數： | 2/13頁 |
| 文件大小： | 274K |
| 代理商： | PHP32N06L |
Philips Semiconductors
PHP32N06LT; PHB32N06LT
N-channel enhancement mode field effect transistor
Product data
Rev. 01 — 06 November 2001
2 of 13
9397 750 09024
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
-
-
-
-
30
-
Max
60
34
97
175
40
43
Unit
V
A
W
°
C
m
m
T
mb
= 25
°
C; V
GS
= 5 V
T
mb
= 25
°
C
T
j
= 25
°
C; V
GS
= 5 V; I
D
= 20 A
T
j
= 25
°
C; V
GS
= 4.5 V; I
D
= 20 A
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
V
GSM
non-repetitive gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
-
-
-
-
-
55
55
Max
60
60
±
15
±
20
34
24
136
97
+175
+175
Unit
V
V
V
V
A
A
A
W
°
C
°
C
R
GS
= 20 k
t
p
≤
50
μ
s
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
reverse drain current (DC)
I
SM
pulsed reverse drain current
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
34
136
A
A
unclamped inductive load; I
D
= 20 A;
t
p
= 0.11 ms; V
DS
≤
25 V; V
GS
= 5 V;
R
GS
= 50
; starting T
j
= 25
°
C
-
100
mJ
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相關代理商/技術參數 |
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| PHP32N06LT | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP32N06LT,127 | 功能描述:MOSFET RAIL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP33N10 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| PHP33N10/B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT |
| PHP33NQ20T | 功能描述:MOSFET TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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