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參數(shù)資料
| 型號： | PHP47NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 47 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 3/14頁 |
| 文件大小： | 267K |
| 代理商： | PHP47NQ10T |
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 May 2001
3 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
V
GS
≥
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Unclamped inductive load; V
DD
≤
25 V; R
GS
= 50
;
V
GS
= 5 V; starting T
j
= 25
°
C and 150
°
C.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
03aa16
0
20
40
60
80
100
120
P
der
(%)
0
50
100
150
200
T
mb
(
o
C)
03aa24
0
20
40
60
80
100
120
0
50
100
150
200
T
mb
(
o
C)
I
der
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
RDSon = VDS / ID
102
10
1
103
ID
(A)
1
10
102
103
VDS (V)
tp =
1
μ
s
10
μ
s
100
μ
s
1 ms
10 ms
100ms
D.C.
003aaa097
tp (ms)
10
1
10-1
10-2
10-3
1
10
102
IAS
(A)
25 oC
Tj prior to avalanche = 150 oC
003aaa098
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