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參數(shù)資料
| 型號： | PHP47NQ10T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 47 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 267K |
| 代理商： | PHP47NQ10T |
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 May 2001
4 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
thermal resistance from junction to ambient
Conditions
Figure 5
Value
0.9
Unit
K/W
R
th(j-a)
R
th(j-a)
SOT78 package; vertical in still air.
SOT404 package; mounted on
printed circuit board; minimum
footprint.
60
50
K/W
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
10
1
10-1
10-2
10-3
10-4
10-5
10-6
10-7
Zth (j-mb)
(K/W)
10-1
10-2
10-3
δ
=
0.5
0.2
0.1
0.05
0.02
Single pulse
T
P
tp
t
T
tp
δ
=
tp (s)
1
003aaa099
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