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參數(shù)資料
| 型號(hào)： | PHP95N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 304K |
| 代理商： | PHP95N03LT |
PHP95N03LT; PHB95N03LT;
PHE95N03LT
N-channel TrenchMOS transistor
Rev. 01 — 02 February 2001
Product specification
c
c
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PHP95N03LT in SOT78 (TO-220AB)
PHB95N03LT in SOT404 (D
2
-PAK)
PHE95N03LT in SOT226 (I
2
-PAK).
2.
Features
I
Low on-state resistance
I
Fast switching.
3.
Applications
I
High frequency computer motherboard DC to DC converters
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pin
Pinning - SOT78, SOT404, SOT226 simplified outline and symbol
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
SOT226 (I
2
-PAK)
2
drain (d)
[1]
3
source (s)
mb
mounting base,
connected to
drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
MBK112
1 2 3
mb
s
d
g
MBB076
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| PHB95N03LT | N-channel TrenchMOS transistor |
| PHE95N03LT | N-channel TrenchMOS transistor |
| PHP96NQ03LT | Turret Lug, for 2.4mm panel thickness |
| PHB96NQ03LT | N-channel enhancement mode field-effect transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHP96NQ03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHP96NQ03LT,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHP98N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
| PHP9N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHP9NQ20T | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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