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參數資料
| 型號： | PHP95N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 3/15頁 |
| 文件大小： | 304K |
| 代理商： | PHP95N03LT |
Philips Semiconductors
PHP95N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 01 — 02 February 2001
3 of 15
9397 750 07814
Philips Electronics N.V. 2001. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Tmb (oC)
Pder
(%)
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120 140 160
180
03ac97
03ad94
0
20
40
60
80
100
120
I
der
(%)
0
60
120
180
T
mb
(oC)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03ad77
1
10
102
103
1
10
102
V
DS
(V)
I
D
(A)
D.C.
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
tp = 10 μs
100 μs
tp
tp
T
T
P
t
δ
=
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