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參數資料
| 型號： | PHT6N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 2/6頁 |
| 文件大小： | 53K |
| 代理商： | PHT6N03LT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHT6N03LT
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)GSS
Gate-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
10
TYP. MAX. UNIT
-
-
-
-
-
-
V
V
V
T
j
= -55C
I
G
= 1 mA
V
DS
= V
GS
; I
D
= 1 mA
1
1.5
-
-
24
18
-
14
0.05
-
0.02
-
2
-
V
V
V
T
j
= 150C
T
j
= -55C
0.6
-
-
-
-
8
-
-
-
-
2.3
30
28
51
-
10
500
1
10
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 5 V; I
D
= 3.2 A
V
GS
= 10 V; I
= 3.2 A
V
GS
= 5 V; I
D
= 3.2 A; T
j
= 150C
V
DS
= 25 V; I
D
= 5.9 A
V
DS
= 30 V; V
GS
= 0 V;
m
m
m
S
μ
A
μ
A
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
g
fs
I
DSS
Forward transconductance
Zero gate voltage drain
current
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
T
j
= 150C
I
GSS
T
j
= 150C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
L
s
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
I
D
= 5.9 A; V
DD
= 24 V; V
GS
= 5 V
-
-
-
-
-
-
-
-
-
-
24
3
11
30
80
95
40
3.5
3.5
7.5
-
-
-
V
DD
= 15 V; I
D
= 5.9 A;
V
= 5 V; R
= 5
Resistive load
45
130
135
55
-
-
-
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
1050
270
140
-
-
-
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
5.9
A
-
-
10
A
I
F
= 5.9 A; V
GS
= 0 V
I
F
= 5.9 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= -10 V; V
R
= 25 V
-
-
-
0.75
100
0.4
1.2
-
-
V
ns
μ
C
January 1998
2
Rev 1.300
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PHT6N03LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12.8A I(D) | SOT-223 |
| PHT6N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHT6N03TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12.8A I(D) | SOT-223 |
| PHT6N06 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHT6N06LT | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET N-Channel 55V 5.5A SOT223 |
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