- 您現在的位置：買賣IC網 > PDF目錄382393 > PHT6N06 (NXP Semiconductors N.V.) TrenchMOS transistor Standard level FET PDF資料下載
參數資料
| 型號： | PHT6N06 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | TrenchMOS晶體管標準電平場效應管 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 71K |
| 代理商： | PHT6N06 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT6N06T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mounting.
Using
’trench’
technology the
device
features
on-state resistance and has
integral zener diodes giving
ESDprotection.Itisintendedfor
use in DC-DC converters and
general
purpose
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
Drain-source voltage
Drain current (DC) T
sp
= 25 C
Drain current (DC) T
amb
= 25 C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
55
5.5
2.5
8.3
150
150
V
A
A
W
C
m
very
low
P
tot
T
j
R
DS(ON)
switching
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
CONDITIONS
-
R
GS
= 20 k
-
T
sp
= 25 C
T
amb
= 25 C
T
sp
= 100 C
T
amb
= 100 C
T
sp
= 25 C
T
amb
= 25 C
T
sp
= 25 C
T
amb
= 25 C
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
55
55
20
5.5
2.5
3.8
1.75
22
10
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
A
A
W
W
C
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
, T
j
Storage & operating temperature
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
d
g
s
4
1
2
3
September 1997
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| PHU2N50E | PowerMOS transistors Avalanche energy rated |
| PHW11N50E | PowerMOS transistors Avalanche energy rated |
| PHB11N50E | PowerMOS transistors Avalanche energy rated |
| PHW14N50E | PowerMOS transistors Avalanche energy rated |
| PHW20N50E | PowerMOS transistors Avalanche energy rated |
相關代理商/技術參數 |
參數描述 |
|---|---|
| PHT6N06LT | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET N-Channel 55V 5.5A SOT223 |
| PHT6N06LT /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHT6N06LT,135 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHT6N06LT | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 |
| PHT6N06LT.135 | 制造商:NXP Semiconductors 功能描述:MOSFET N REEL 4K |
發布緊急采購，3分鐘左右您將得到回復。