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參數資料
| 型號： | PHT6N03T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 70K |
| 代理商： | PHT6N03T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT6N03T
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
standard level field-effect power
transistor
in
a
suitable for surface mounting. Using
’
trench
’
technology,
featuresverylow on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended
for
use
converters and
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope
V
DS
I
D
Drain-source voltage
Drain current (DC) T
sp
= 25 C
Drain current (DC) T
amb
= 25 C
Total power dissipation
Junction temperature
Drain-source on-state
resistance
30
12.8
5.9
8.3
150
30
V
A
A
W
C
m
the
device
P
tot
T
j
R
DS(ON)
in
DC-DC
V
GS
= 10 V
general purpose
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±
V
GS
I
D
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
CONDITIONS
-
R
GS
= 20 k
-
T
sp
= 25 C
T
amb
= 25 C
T
sp
T
amb
= 100 C
T
sp
T
amb
= 25 C
T
sp
T
amb
= 25 C
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
MAX.
30
30
16
12.8
5.9
9
4.1
51.2
23.6
8.3
1.8
150
UNIT
V
V
V
A
A
A
A
A
A
W
W
C
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
, T
j
Storage & operating temperature
THERMAL RESISTANCES
SYMBOL
R
th j-sp
PARAMETER
Thermal resistance junction to
solder point
Thermal resistance junction to
ambient
CONDITIONS
Mounted on any PCB
TYP.
12
MAX.
15
UNIT
K/W
R
th j-amb
Mounted on PCB of Fig.19
-
70
K/W
d
g
s
4
1
2
3
November 1997
1
Rev 1.200
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相關代理商/技術參數 |
參數描述 |
|---|---|
| PHT6N03TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12.8A I(D) | SOT-223 |
| PHT6N06 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
| PHT6N06LT | 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-223 制造商:NXP Semiconductors 功能描述:MOSFET N-Channel 55V 5.5A SOT223 |
| PHT6N06LT /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHT6N06LT,135 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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