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參數資料
型號: PHT6N03T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS transistor Standard level FET
中文描述: 5.9 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC PACKAGE-4
文件頁數: 2/10頁
文件大小: 70K
代理商: PHT6N03T
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHT6N03T
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k
)
MIN.
-
MAX.
2
UNIT
kV
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
24
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
30
51
UNIT
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 30 V; V
GS
= 0 V;
μ
A
μ
A
μ
A
μ
A
V
m
m
T
j
= 150C
I
GSS
Gate source leakage current
V
GS
=
±
10 V; V
DS
= 0 V
T
j
= 150C
±
V
(BR)GSS
R
DS(ON)
Gate source breakdown voltage I
G
=
±
1 mA;
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 3.2 A
T
j
= 150C
DYNAMIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 5.9 A
I
D
= 5.9 A; V
DD
= 24 V; V
GS
= 10 V
MIN.
5
-
-
-
TYP.
10
22.5
4.5
13.5
MAX.
-
-
-
-
UNIT
S
nC
nC
nC
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
-
-
-
-
-
1500
370
170
16
30
35
25
3.5
2000
470
250
22
60
50
38
-
pF
pF
pF
ns
ns
ns
ns
nH
V
DD
= 15 V; I
D
= 5.9 A;
V
= 10 V; R
G
= 5
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
L
d
Internal drain inductance
-
4.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
November 1997
2
Rev 1.200
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