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參數資料
| 型號： | PHU2N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁數： | 3/9頁 |
| 文件大?。?/td> | 64K |
| 代理商： | PHU2N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHU2N50E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
2
A
T
mb
= 25C
-
-
8
A
I
S
= 2 A; V
GS
= 0 V
I
S
= 2 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
300
2.1
May 1999
3
Rev 1.000
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相關代理商/技術參數 |
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|---|---|
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| PHU-332S | 制造商:Citizen Systems America Corporation 功能描述:Paper Holder, PPU-700, 2 PNE Sensor, Side paper load |
| PHU-332T | 制造商:Citizen Systems America Corporation 功能描述:Paper Holder, PPU-700, 2 PNE Sensor, Top paper load |
| PHU66NQ03LT | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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