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參數(shù)資料
| 型號： | PHU2N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | PLASTIC, IPAK-3 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大小： | 64K |
| 代理商： | PHU2N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHU2N50E
Fig.19. Peak body recovery voltage dV/dt. The dV/dt
= f(I
DS
). The dI/dt is 100A/
μ
s.
0.4
0.8
1
5
3
3.5
4
4.5
5
5.5
6
6.5
7
Ids (A)
dV/dt (V/ns)
May 1999
7
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PHU-331S | 制造商:Citizen Systems America Corporation 功能描述:Paper Holder, PPU-700, 1 PNE Sensor, Side paper load |
| PHU-331T | 制造商:Citizen Systems America Corporation 功能描述:Paper Holder, PPU-700, 1 PNE Sensor, Top paper load |
| PHU-332S | 制造商:Citizen Systems America Corporation 功能描述:Paper Holder, PPU-700, 2 PNE Sensor, Side paper load |
| PHU-332T | 制造商:Citizen Systems America Corporation 功能描述:Paper Holder, PPU-700, 2 PNE Sensor, Top paper load |
| PHU66NQ03LT | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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