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參數資料
| 型號： | PHW14N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 14 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 85K |
| 代理商： | PHW14N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHW14N50E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHW14N50E
0.001
0.01
0.1
1
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Peak Pulsed Drain Current, IDM (A)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
PHW14N50E
0
2
4
6
8
10
12
14
0
1
2
3
4
5
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
4 V
4.2 V
4.4 V
4.6 V
Tj = 25 C
VGS = 10 V
4.8 V
5 V
6 V
PHW14N50E
0.1
1
10
100
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
d.c.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
PHW14N50E
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
Drain Current, ID (A)
Drain-Source On Resistance, RDS(on) (Ohms)
4V
4.2V
VGS = 6 V
4.8V
10V
Tj = 25 C
5V
4.6 V
4.4 V
December 1998
3
Rev 1.000
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