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參數資料
| 型號： | PHW7N60 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 7 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 3/7頁 |
| 文件大小： | 56K |
| 代理商： | PHW7N60 |
Philips Semiconductors
Product specification
PowerMOS transistor
PHW7N60
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx57-mv
D =
D =
t
p
t
p
T
T
P
t
D
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
5
10
15
20
5.5 V
PHP6N60
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
Tj = 25 C
5 V
7 V
10 V
6 V
VGS = 4.5 V
10
100
1000
VDS / V
100
10
1
0.1
BUK457-600B
ID / A
DC
100 ms
10 ms
1 ms
100 us
tp = 10 us
RDS(ON) = VDS/ID
0
5
10
15
20
0
1
2
3
4
5 V
5.5 V
10 V
PHP6N60
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
VGS = 4.5 V
6 V
Tj = 25 C
June 1997
3
Rev 1.000
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