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參數資料
| 型號： | PHX18NQ11T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 12.5 A, 110 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULL PACK-3 |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PHX18NQ11T |
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
3 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of heatsink temperature.
Fig 2.
Normalized continuous drain current as a
function of heatsink temperature.
T
h
= 25
°
C; I
DM
is single pulse; V
GS
= 10 V
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa13
0
40
80
120
0
50
100
150
Th (
°
C)
Pder
(%)
03aa21
0
40
80
120
0
50
100
150
200
Th (
°
C)
Ider
(%)
P
der
P
P
tot 25 C
°
)
-----------------------
100
%
×
=
I
der
I
I
D 25 C
°
)
-------------------
100
%
×
=
03am62
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
DC
100 ms
10 ms
1 ms
tp = 10
μ
s
100
μ
s
Limit RDSon = VDS / ID
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