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參數(shù)資料
| 型號(hào)： | PHX18NQ11T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 12.5 A, 110 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 94K |
| 代理商： | PHX18NQ11T |
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
8 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
7.
Isolation characteristics
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I
D
= 3 A; V
DD
= 20 V and 80 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03am66
0
4
8
12
0
0.3
0.6
0.9
1.2
VSD (V)
IS
(A)
Tj = 25
°
C
150
°
C
VGS = 0 V
03am68
0
2
4
6
8
10
0
5
10
15
20
25
QG (nC)
VGS
(V)
ID = 3 A
Tj = 25
°
C
20 V
VDD = 80 V
Table 6:
Symbol
V
(isol)RMS
Isolation characteristics
Parameter
RMS isolation voltage from all three
terminals to external heatsink
Capacitance from drain to external
heatsink
Conditions
f = 50-60 Hz; sinusoidal waveform;
RH
≤
65 %; clean and dust-free.
Min.
-
Typ.
-
Max.
2500
Unit
V
C
(d-h)
-
10
-
pF
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