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參數資料
| 型號： | PHX18NQ11T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | 12.5 A, 110 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULL PACK-3 |
| 文件頁數： | 6/12頁 |
| 文件大小： | 94K |
| 代理商： | PHX18NQ11T |
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 13 February 2004
6 of 12
9397 750 12915
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03am63
0
4
8
12
0
0.5
1
1.5
2
VDS (V)
ID
(A)
4.6 V
4.4 V
Tj = 25
°
C
10 V
4.8 V
5 V
5.2 V
5.4 V
6 V
03am65
0
4
8
12
0
2
4
6
VGS (V)
ID
(A)
Tj = 25
°
C
150
°
C
03am64
0
0.05
0.1
0.15
0.2
0
4
8
12
ID (A)
RDSon
(
)
10 V
Tj = 25
°
C
6 V
5.2 V
5.4 V
5 V
VGS = 4.8 V
03aa29
0
1
2
3
-60
0
60
120
180
Tj (
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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