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參數資料
型號: Q62702-F1129
廠商: SIEMENS AG
英文描述: Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
中文描述: 硅N溝道MOSFET四極管(短通道晶體管與高S / C的低質量的因素噪聲,增益控制的輸入級高達1 GHz)
文件頁數: 5/11頁
文件大小: 101K
代理商: Q62702-F1129
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
相關PDF資料
PDF描述
Q62702-F1132 Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
Q62702-F1144 NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
Q62702-F1177 Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
Q62702-F1189 NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 GaAs FET (N-channel dual-gate GaAs MES FET)
相關代理商/技術參數
參數描述
Q62702-F1132 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications)
Q62702-F1144 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)
Q62702-F1177 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
Q62702-F1189 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
Q62702-F1215 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET)
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