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參數(shù)資料
| 型號： | Q62702-F1129 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
| 中文描述： | 硅N溝道MOSFET四極管（短通道晶體管與高S / C的低質量的因素噪聲，增益控制的輸入級高達1 GHz） |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1129 |
BGC420
High Frequency Products
8
Edition A13, 05/99
* Internal Resistors
R1
3 Vc
R2
Vr 2
R3
Vb 0
R4
Vb rfin
47k
500
10k
2.7k
TC=-0.0006,0.0000025
TC=-0.0006,0.0
TC=-0.0006,0.0000025
TC=-0.0006,0.0
* External Resistors
Rx
Vcc Vr
Rout
vout 0
Rin
vin 0
{R}
50
50
TC=+0.000050,0.0
* External Capacitors
C2
C3
C7 rfin vin
C6
rfout vout
Vb 0
Vr 0
1nF
100pF
220pF
220pF
* Inductors (external)
L1
Vr rfout
100nH
* Transistors
Q1
rfout rfin 0
X2
2 3 Vb 0
X3
Vcc 5 5 0
X4
5 3 3 0
BFP420
8PL18
2PL18
2PL18
.PROBE
.MODEL BFP420 NPN(
+ IS = 2.0045e-16 BF = 72.534
+ VAF = 28.383 IKF = 0.48731 ISE = 1.9049e-14
+ NE = 2.0518 BR = 7.8287 NR = 1.3325
+ VAR = 19.705 IKR = 0.69141 ISC = 1.9237e-17
+ NC = 1.1724 RB = 3.4849 IRB = 0.00072983
+ RBM = 8.5757 RE = 0.31111 RC = 0.10105
+ CJE = 1.8063e-15 VJE = 0.8051 MJE = 0.46576
+ TF = 6.7661e-12 XTF = 0.42199 VTF = 0.23794
+ ITF = 0.001 PTF = 0 CJC = 2.3453e-13
+ VJC = 0.81969 MJC = 0.30232 XCJC = 0.3
+ TR = 2.3249e-09 CJS= 0 VJS = 0.75
+ MJS = 0 XTB = 0 EG = 1.11
+ XTI = 3 FC = 0.73234)
NF = 1.2432
* PNP: PL18 E B C Bulk
.SUBCKT 8PL18 3 2 1 94
Q1 993 2 3 94 TL18 8
Q2 94 2 3 94 VSL18 8
Q3 94 2 993 94 LSL18 8
RCEX 993 1 0.204
.ENDS
.SUBCKT 2PL18 3 2 1 94
Q1 993 2 3 94 TL18 2
Q2 94 2 3 94 VSL18 2
Q3 94 2 993 94 LSL18 2
RCEX 993 1 0.816
.ENDS
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PDF描述 |
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| Q62702-F1132 | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| Q62702-F1144 | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1132 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| Q62702-F1144 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) |
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