- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361181 > Q62702-F1132 (SIEMENS AG) Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-F1132 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| 中文描述： | 硅N溝道MOSFET三極管（對(duì)于高頻階段高達(dá)300 MHz，最好是在FM應(yīng)用） |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-F1132 |
BGC420
High Frequency Products
1
Edition A13, 05/99
Type
Marking
Ordering Code
(8-mm taped)
Q62702-G0092
Pin Configuration
(circuit Diagram)
see below
Package
BGC420
42s
SCT598
Description
The BGC420 is a silicon self biased RF Transistor (Q1). It offers an adjustable collector current
nearly independent from device voltage in the range from 2.0V to 4.5V. Additionally a control pin
(Vc) for switching the device off is provided. The collector current can be adjusted by connecting a
resistor (Rx) between Vcc and Vr.
Self-Biased BFP420
l
SIEGET
25- Technology
l
Small SCT598-Package
l
Control Pin For Switching The Device Off
l
Current Easy Adjustable By An External Resistor
l
Voltage Independent Current (2V – 4.5V)
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Equivalent Circuit
RFin
RFout
Q1
GND
Active
Bias
Circuit
Vb
Vc
Vcc
Vr
Pin Connections, SCT598
Vr,5
RFout,6
GND,7
Vc, 8
4,Vcc
3, Vb
2, GND
1,RFin
Note: Top View
VPW05982
7
5
2
3
1
4
6
8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-F1144 | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F1144 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。