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參數資料
| 型號： | Q62702-F1132 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| 中文描述： | 硅N溝道MOSFET三極管（對于高頻階段高達300 MHz，最好是在FM應用） |
| 文件頁數： | 9/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1132 |
BGC420
High Frequency Products
9
Edition A13, 05/99
*****
.MODEL TL18 PNP
+IS = 2.914E-17 NF = 1.000E+00 BF = 4.005E+02
+NE = 1.553E+00 ISE = 6.923E-16 NR = 1.000E+00
+BR = 2.869E+01 NC = 1.500E+00 ISC = 8.190E-15
+VAF = 6.000E+01 IKF = 1.676E-04 VAR = 2.214E+00
+IKR = 2.474E-05 RB = 6.000E+01 IRB = 0.000E+00
+RBM = 4.000E+01 RE = 2.597E+00 RC = 4.000E+00
+XTB =-6.000E-01 EG = 1.156E+00 XTI = 3.000E+00
+CJE = 1.200E-14 VJE = 4.900E-01 MJE = 1.360E-01
+TF = 7.600E-10 XTF = 2.872E-01 VTF = 1.000E+03
+ITF = 1.400E-02 CJC = 4.700E-13 VJC = 7.610E-01
+MJC = 3.760E-01 XCJC = 1.000E+00 TR = 0.000E+00
+CJS = 0.000E+00 VJS = 7.500E-01 MJS = 0.000E+00
+PTF = 0.000E+00 FC = 5.000E-01
*****
.MODEL VSL18 PNP
+IS = 1.630E-19 NF = 1.000E+00 BF = 1.000E+09
+NE = 1.500E+00 ISE = 0.000E+00 NR = 1.000E+00
+BR = 1.000E+09 NC = 2.000E+00 ISC = 0.000E+00
+VAF = 1.000E+02 IKF = 1.794E-04 VAR = 1.700E+00
+IKR = 1.000E+00 RB = 0.000E+00 IRB = 0.000E+00
+RBM = 0.000E+00 RE = 0.000E+00 RC = 0.000E+00
+XTB = 0.000E+00 EG = 1.122E+00 XTI = 3.000E+00
+CJE = 0.000E+00 VJE = 6.800E-01 MJE = 3.400E-01
+TF = 2.000E-09 XTF = 0.000E+00 VTF = 1.000E+03
+ITF = 1.000E+06 CJC = 1.950E-13 VJC = 5.500E-01
+MJC = 3.770E-01 XCJC = 0.000E+00 TR = 0.000E+00
+CJS = 0.000E+00 VJS = 7.500E-01 MJS = 0.000E+00
+PTF = 0.000E+00 FC = 5.000E-01
*****
.MODEL LSL18 PNP
+IS = 4.261E-17 NF = 1.000E+00 BF = 1.000E+09
+NE = 1.500E+00 ISE = 0.000E+00 NR = 1.000E+00
+BR = 1.000E+09 NC = 2.000E+00 ISC = 0.000E+00
+VAF = 6.000E+01 IKF = 9.648E-05 VAR = 1.700E+00
+IKR = 1.000E+00 RB = 0.000E+00 IRB = 0.000E+00
+RBM = 0.000E+00 RE = 0.000E+00 RC = 0.000E+00
+XTB = 0.000E+00 EG = 1.158E+00 XTI = 3.000E+00
+CJE = 0.000E+00 VJE = 6.800E-01 MJE = 3.400E-01
+TF = 1.000E-09 XTF = 0.000E+00 VTF = 1.000E+03
+ITF = 1.000E+06 CJC = 0.000E+00 VJC = 4.600E-01
+MJC = 3.000E-01 XCJC = 0.000E+00 TR = 0.000E+00
+CJS = 0.000E+00 VJS = 7.500E-01 MJS = 0.000E+00
+PTF = 0.000E+00 FC = 5.000E-01
*****
.END
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1144 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
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