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參數資料
| 型號： | Q62702-F1132 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| 中文描述： | 硅N溝道MOSFET三極管（對于高頻階段高達300 MHz，最好是在FM應用） |
| 文件頁數： | 11/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1132 |
BGC420
High Frequency Products
11
Edition A13, 05/99
Package
Published by
Infineon Technologies AG i Gr.,
Bereichs Kommunikation
St.-Martin-Strasse 76,
D-81541 München
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain
components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change
reserved.
We hereby disclaim any and all warranties, including
but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated
herein.
Infineon Technologies is an approved CECC
manufacturer.
Information
For further information on technology, delivery terms
and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or
our Infineon Technologies Representatives
worldwide (see address list).
Warnings
Due to technical requirements components may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be
used in life-support devices or systems with the
express written approval of Infineon Technologies, if
a failure of such components can reasonably be
expected to cause the failure of that life-support
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.
相關PDF資料 |
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| Q62702-F1144 | NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1144 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
| Q62702-F1177 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
| Q62702-F1189 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) |
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) |
| Q62702-F1218 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
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