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參數資料
| 型號： | Q62702-F137 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP SILICON PLANAR TRANSISTORS |
| 中文描述： | 進步黨硅平面型晶體管 |
| 文件頁數： | 10/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F137 |
BGC420
High Frequency Products
10
Edition A13, 05/99
Table 1. Parasitic circuit elements for frequencies above 100MHz
X3
X4
R1
X2
R2
R3
R4
Q1
Vc
Vb
GND
RFin
RFout
Vr
Vcc
C2
L1
C3
Rx
V
2
3
V
Lp1
Lp2
Cp1
Cp2
Lp5
Lp3
Lp4
Lp6
Cp3
Lp7
Figure 4. Parasitic circuit elements for frequencies above 100MHz
Element
Value
Lp1
Lp2
Lp3
Lp4
Lp5
Lp6
Lp7
Cp1
Cp2
Cp3
0.58nH
0.56nH
0.23nH
0.05nH
0.53nH
0.47nH
1nH
134fF
136fF
6.9fF
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| Q62702-F1377 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
| Q62702-F1378 | NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
| Q62702-F1382 | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
| Q62702-F1391 | GaAs MMIC (Biased Dual Gate GaAs FET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-F1372 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
| Q62702-F1377 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
| Q62702-F1378 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
| Q62702-F1382 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
| Q62702-F1391 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs MMIC (Biased Dual Gate GaAs FET) |
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