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參數資料
型號: Q62702-F137
廠商: SIEMENS AG
英文描述: PNP SILICON PLANAR TRANSISTORS
中文描述: 進步黨硅平面型晶體管
文件頁數: 4/11頁
文件大小: 101K
代理商: Q62702-F137
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料
PDF描述
Q62702-F1372 Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
Q62702-F1377 NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
Q62702-F1378 NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
Q62702-F1382 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
Q62702-F1391 GaAs MMIC (Biased Dual Gate GaAs FET)
相關代理商/技術參數
參數描述
Q62702-F1372 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
Q62702-F1377 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
Q62702-F1378 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
Q62702-F1382 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
Q62702-F1391 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs MMIC (Biased Dual Gate GaAs FET)
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