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參數(shù)資料
型號: Q62702-F137
廠商: SIEMENS AG
英文描述: PNP SILICON PLANAR TRANSISTORS
中文描述: 進步黨硅平面型晶體管
文件頁數(shù): 5/11頁
文件大小: 101K
代理商: Q62702-F137
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
相關(guān)PDF資料
PDF描述
Q62702-F1372 Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
Q62702-F1377 NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
Q62702-F1378 NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
Q62702-F1382 NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
Q62702-F1391 GaAs MMIC (Biased Dual Gate GaAs FET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F1372 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
Q62702-F1377 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
Q62702-F1378 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
Q62702-F1382 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA)
Q62702-F1391 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs MMIC (Biased Dual Gate GaAs FET)
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