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參數資料
| 型號： | Q67041-A4707 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | FAST IGBT IN NPT TECHNOLOGY |
| 中文描述： | 快速IGBT技術在不擴散核武器條約 |
| 文件頁數： | 3/12頁 |
| 文件大小： | 385K |
| 代理商： | Q67041-A4707 |
SGP02N60,
SGB02N60
SGD02N60
3
Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
20
13
259
52
0.036
0.028
0.064
24
16
311
62
0.041
0.036
0.078
ns
T
j
=25
°
C,
V
CC
=400V,
I
C
=2A,
V
GE
=0/15V,
R
G
=118
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=180pF
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
20
14
287
67
0.054
0.043
0.097
24
17
344
80
0.062
0.056
0.118
ns
T
j
=150
°
C,
V
CC
=400V,
I
C
=2A,
V
GE
=0/15V,
R
G
=118
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=180pF
mJ
1)
Leakage inductance
L
σ
and Stray capacity
C
σ
due to dynamic test circuit in Figure E.
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