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參數資料
| 型號： | Q67041-A4707 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | FAST IGBT IN NPT TECHNOLOGY |
| 中文描述： | 快速IGBT技術在不擴散核武器條約 |
| 文件頁數： | 7/12頁 |
| 文件大小： | 385K |
| 代理商： | Q67041-A4707 |
SGP02N60,
SGB02N60
SGD02N60
7
Jul-02
E
,
S
0A
1A
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 118
,
Dynamic test circuit in Figure E)
2A
3A
4A
5A
0.0mJ
0.1mJ
0.2mJ
E
on
*
E
off
E
ts
*
E
,
S
0
100
R
G
,
GATE RESISTOR
200
300
400
0.0mJ
0.1mJ
0.2mJ
E
ts
*
E
on
*
E
off
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 2A,
Dynamic test circuit in Figure E)
E
,
S
0°C
50°C
100°C
150°C
0.0mJ
0.1mJ
0.2mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
t
p
,
PULSE WIDTH
1ms
10ms 100ms
1s
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 2A,
R
G
= 118
,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
1.026
1.3
1.69
0.183
τ
,
(s)
0.035
3.62*10
-3
4.02*10
-4
4.21*10
-5
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| Q67041-A4709 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology |
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