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參數資料
型號: Q67100-Q2776
廠商: INFINEON TECHNOLOGIES AG
英文描述: BAG 5X8 SHIELDED ZIP LOCK
中文描述: 64兆位同步DRAM
文件頁數: 21/53頁
文件大小: 418K
代理商: Q67100-Q2776
HYB39S64400/800/160BT(L)
64MBit Synchronous DRAM
Semiconductor Group
20
Timing Diagrams
1. Bank Activate Command Cycle
2. Burst Read Operation
3. Read Interrupted by a Read
4. Read to Write Interval
4.1 Read to Write Interval
4.2 Minimum Read to Write Interval
4.3 Non-Minimum Read to Write Interval
5. Burst Write Operation
6. Write and Read Interrupt
6.1 Write Interrupted by a Write
6.2 Write Interrupted by Read
7. Burst Write & Read with Auto-Precharge
7.1 Burst Write with Auto-Precharge
7.2 Burst Read with Auto-Precharge
8. Burst Termination
8.1 Termination of a full Page Burst Write Operation
8.2 Termination of a full Page Burst Write Operation
9. AC- Parameters
9.1 AC Parameters for a Write Timing
9.2 AC Parameters for a Read Timing
10. Mode Register Set
11. Power on Sequence and Auto Refresh (CBR)
12. Clock Suspension (using CKE)
12. 1 Clock Suspension During Burst Read CAS Latency = 2
12. 2 Clock Suspension During Burst Read CAS Latency = 3
12. 3 Clock Suspension During Burst Write CAS Latency = 2
12. 4 Clock Suspension During Burst Write CAS Latency = 3
13. Power Down Mode and Clock Suspend
14. Self Refresh ( Entry and Exit )
15. Auto Refresh ( CBR )
16. Random Column Read ( Page within same Bank)
16.1 CAS Latency = 2
16.2 CAS Latency = 3
17. Random Column Write ( Page within same Bank)
17.1 CAS Latency = 2
17.2 CAS Latency = 3
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相關代理商/技術參數
參數描述
Q67100-Q2781 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
Q67100-Q2800 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM
Q67100-Q3016 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module
Q67100-Q3017 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module
Q67100-Q3018 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8M x 36-Bit EDO-DRAM Module
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