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參數資料
| 型號： | QST4 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Low frequency amplifier |
| 中文描述： | 低頻放大器 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 67K |
| 代理商： | QST4 |
QST4
Transistors
Rev.C
1/2
Low frequency amplifier
QST4
z
Application
Low frequency amplifier
Driver
z
Features
1) A collector current
is large.
2) V
CE(sat)
: max.
250mV
At I
C
=
1.5A / I
B
=
30mA
z
External dimensions
(Unit : mm)
1.6
2.8
0
0
(
0
(
2
(
ROHM : TSMT6
QST4
(
(
(
Abbreviated symbol : T04
Each lead has same dimensions
z
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
3
6
500
1.25
150
55 to
+
150
1
Unit
V
V
V
A
A
mW
W
3
°
C
°
C
2
Each Termminal Mounted on a Recommended
Mounted on a 25mm
×
25mm
×
0.8mm Ceramic substrate
1
2
3
z
Electrical characteristics
(Ta=25
°
C)
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, P
W
1ms
t
z
Equivalent circuit
(4)
(5)
(6)
(1)
(2)
(3)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Min.
15
12
6
270
Typ.
120
Max.
100
100
250
680
Unit
V
V
V
nA
nA
mV
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
280
30
MHz
pF
V
CE
=
2V, I
E
=
500mA, f
=
100MHz
I
C
=
10
μ
A
I
C
=
1mA
I
E
=
10
μ
A
V
CB
=
15V
V
EB
=
6V
I
C
=
1.5A, I
B
=
30mA
V
CE
=
2V, I
C
=
500mA
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
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