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參數資料
| 型號： | RF1S40N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | CAP 470PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 371K |
| 代理商： | RF1S40N10 |
2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
RFG40N10, RFP40N10, RF1S40N10,
RF1S40N10SM
40A, 100V, 0.040 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA9846
Features
40A, 100V
r
DS(ON)
= 0.040
UIS Rating Curve
SOA is Power Dissipation Limited
o
C Operating Temperature
175
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG40N10
TO-247
RFG40N10
RFP40N10
TO-220AB
RFP40N10
RF1S40N10
TO-262AA
F1S40N10
RF1S40N10SM
TO-263AB
F1S40N10
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10SM9A.
D
G
S
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
JEDEC TO-262AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
GATE
SDRAIN
DRAIN
(FLANGE)
Data Sheet
January 2002
相關PDF資料 |
PDF描述 |
|---|---|
| RF1S40N10SM | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
| RF1S45N06LESM | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs(45A, 60V, 0.028 Ω,邏輯電平,N溝道功率MOS場效應管) |
| RFP45N06LE | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S45N06SM | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFG45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1S40N10LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S40N10LESM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S40N10LESM9A | 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S40N10SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S40N10SM9A | 功能描述:MOSFET USE 512-FDB3682 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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