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參數資料
| 型號： | RF1S60P03 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 60 A, 30 V, 0.027 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數： | 1/6頁 |
| 文件大小： | 104K |
| 代理商： | RF1S60P03 |
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.
Copyright
Harris Corporation 1995
4-51
S E M I C O N D U C T O R
RFG60P03, RFP60P03,
RF1S60P03, RF1S60P03SM
60A, 30V, Avalanche Rated, P-Channel
Enhancement-Mode Power MOSFETs
Packages
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-262AA
JEDEC TO-263AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
A
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
A
A
M
DRAIN
(FLANGE)
GATE
SOURCE
Features
60A, 30V
r
DS(ON)
= 0.027
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
+175
o
C Operating Temperature
Description
The
RF1S60P03SM P-Channel power MOSFETs are manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
RFG60P03,
RFP60P03,
RF1S60P03
and
Formerly developmental type TA49045.
Symbol
PACKAGE AVAILABILITY
PACKAGE
TO-247
PART NUMBER
RFG60P03
RFP60P03
RF1S60P03
RF1S60P03SM
NOTE: When ordering use the entire part number.
BRAND
RFG60P03
RFP60P03
F1S60P03
F1S60P03
TO-220AB
TO-262AA
TO-263AB
D
G
S
December 1995
Absolute Maximum Ratings
T
C
= +25
o
C
RFG60P03, RFP60P03,
RF1S60P03, RFS60P03SM
-30
-30
±
20
UNITS
V
V
V
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation
T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate above +25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
60
Refer to Peak Current Curve
Refer to UIS Curve
A
176
1.17
W
W/
o
C
o
C
-55 to +175
File Number
3951.1
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| RFG60P05E | 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET |
| RFG60P06E | 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET(60A, 60V, 0.030 Ω,P溝道功率MOS場效應管) |
| RFG60P06E | 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RF1S60P03SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RF1S60P03SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| RF1S630 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S630SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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