
2-79
2
P
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
8
7
6
5
VCC2
GND1
PD
RF IN
VCC1
RF OUT
RF OUT
GND2
BIAS
CIRCUITS
RF2127
ME DIUM POWER LINEAR AMPLIFIER
DECT Cordless Applications
PCS Communication Systems
Commercial and Consumer Systems
Portable Battery-Powered Equipment
The RF2127 is a medium-power, high-efficiency, linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 1800MHz digital PCS phone transmitters
requiring
linear
amplification
1800MHz and 1900MHz, with over 100mW transmitted
power. It will also function as the driver stage for the
RF2125 high power amplifier. A simple power down func-
tion is included for TDD operation.
operating
between
Single 3.0V to 6.5V Supply
100mW Linear Output Power
25dB Small Signal Gain
30% Efficiency
Digitally Controlled Power Down Mode
1500MHz to 1900MHz Operation
RF2127
RF2127 PCBA
Medium Power Linear Amplifier
Fully Assembled Evaluation Board
2
Rev A3 010720
0.248
0.232
0.200
0.192
0.160
0.152
0.018
0.014
0.050
0.059
0.057
0.010
0.004
-A-
0.0100
0.0076
0.0500
0.0164
8° MAX
0° MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Pac kage S tyle: S OIC-8