
4-75
4
G
A
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
1
2
3
4
8
7
6
5
VCC
GND
GND
RF IN
RF OUT
GND
GND
GND
RF2310
WIDEBAND GE NER AL PUR POS E AMPLIFIER
General Purpose High Bandwidth Gain
Blocks
IF or RF Buffer Amplifiers
Broadband Test Equipment
Final PA for Medium Power Applications
Driver Stage for Power Amplifiers
The RF2310 is a general purpose, low-cost, high linearity
RF amplifier IC. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
an easily cascadable 50
gain block. Applications
include IF and RF amplification in wireless voice and data
communication products operating in frequency bands up
to 2500MHz. The gain flatness over a very wide band-
width makes the device suitable for many applications.
The device is self-contained with 50
input and output
impedances and requires only two external DC biasing
elements to operate as specified.
DC to well over 2500MHz Operation
Internally Matched Input and Output
15dB Small Signal Gain
5dB Noise Figure
+19dBm Output Power
Single 3.5V to 6V Positive Power Supply
RF2310
RF2310 PCBA
Wideband General Purpose Amplifier
Fully Assembled Evaluation Board
4
Rev C5 010717
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Dimensions in mm
0.196
0.189
0.008
0.004
-A-
8° MAX
0° MIN
0.034
0.016
0.009
0.007
Pac kage S tyle: S OIC-8