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參數資料
| 型號： | RFD3N08L |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| 中文描述： | 3 A, 80 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 文件頁數： | 1/8頁 |
| 文件大小： | 69K |
| 代理商： | RFD3N08L |
6-26
File Number
2836.4
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFD3N08L, RFD3N08LSM
3A, 80V 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD3N08L and RFD3N08LSM are N-Channel
enhancement mode silicon gate power field effect transistors
specifically designed for use with logic level (5V) driving
sources in applications such as programmable controllers,
automotive switching, and solenoid drivers. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09922.
Features
3A, 80V
r
DS(ON)
= 0.800
Temperature Compensating PSPICE
Model
On Resistance vs Gate Drive Voltage Curves
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFD3N08L
TO-251AA
F3N08L
RFD3N08LSM
TO-252AA
F3N08L
NOTE: Whenordering,includetheentirepartnumber.Addthesuffix9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A
G
D
S
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
DRAIN
GATE
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
Data Sheet
July 1999
相關PDF資料 |
PDF描述 |
|---|---|
| RFD3N08LSM | 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06L | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
| RFD4N06LSM | 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs |
相關代理商/技術參數 |
參數描述 |
|---|---|
| RFD3N08LSM | 制造商:Harris Corporation 功能描述: |
| RFD3N08LSM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFD4N06L | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD4N06LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFD4N06LSM9A | 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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