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參數(shù)資料
| 型號(hào)： | RFP50N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 47K |
| 代理商： | RFP50N06 |
4-462
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG50N05, RFP50N05
50A, 50V 0.022 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFET’S manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors.
Formerly developmental type TA09772.
Features
50A, 50V
r
DS(ON)
= 0.022
UIS Rating Curve (Single Pulse)
175
o
C Operating Temperature
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG50N05
TO-247
RFG50N05
RFP50N05
TO-220AB
RFP50N05
NOTE: When ordering, include the entire part number.
G
D
S
JEDEC STYLE TO-247
JEDEC TO-220AB
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
Data Sheet
July 1999
File Number
2873.3
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PDF描述 |
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| RFG50N06 | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
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| RF1S60P03 | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RF1S60P03SM | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RFG60P05E | 60A, 50V, 0.030 Ohm,P-Channel PowerMOSFET(60A, 50V, 0.030 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP50N06 | 制造商:Intersil Corporation 功能描述:MOSFET N TO-220 |
| RFP50N06_F102 | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP50N06_NL | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| RFP50N06_Q | 功能描述:MOSFET TO-220AB N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RFP50N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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