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參數(shù)資料
| 型號： | S2055A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SILICON DIFFUSED POWER TRANSISTOR |
| 中文描述： | 擴散硅功率晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 98K |
| 代理商： | S2055A |
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency diode ,
primarily for use in horizontal deflection circuites of
colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
MIN
MAX
1500
600
8
15
125
1.5
UNIT
V
V
A
A
W
V
A
V
T
mb
I
C
= 4.5A; I
B
= 2.0A
f = 16KHz
I
F
=4.0A
I
C
=4.5A,I
B1
=-I
B2
=1.2A,V
CC
=140V
25
2.0
1.0
s
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base voltage(open collector)
Collector current (DC)
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
MAX
1500
600
5
8
4
6
125
150
150
UNIT
V
V
V
A
A
A
W
Tmb
25
-55
SYMBOL
I
CE
I
CES
PARAMETER
Collector-emitter cut-off current
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 4.5A; I
B
= 2.0A
I
C
= 4.5A; I
B
= 2.0A
I
C
= 1.0A; V
CE
= 5V
I
F
=4.0A
I
C
= 0.1A; V
CE
= 10V
V
CB
= 10V
I
C
=4.5A,I
B1
=-I
B2
=1.2A,V
CC
=140V
I
C
=4.5A,I
B1
=-I
B2
=1.2A,V
CC
=140V
MIN
MAX
1.0
2.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
V
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
1.5
2.5
30
2.0
V
V
8
V
3
MHz
pF
7.0
1.0
s
s
ELECTRICAL CHARACTERISTICS
TO-3PH
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail:
ic@wingshing
.com
S2055A
SILICON DIFFUSED POWER TRANSISTOR
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S2055AF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON DIFFUSED POWER TRANSISTOR |
| S2055F | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| S2055M | 功能描述:SCR 55A 200V RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S2055MTP | 功能描述:SCR SCR 200V 55A RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流（Ih 最大值）:75 mA 安裝風格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube |
| S2055N | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:SCRs (1 A to 70 A) |
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