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參數(shù)資料
型號： S29CL016J1JFFM112
廠商： SPANSION LLC
元件分類： PROM
英文描述： 512K X 32 FLASH 3.3V PROM, 54 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
文件頁數(shù)： 38/78頁
文件大小： 1825K
代理商： S29CL016J1JFFM112
September 27, 2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
41
Pr el im i n a r y
9
Advanced Sector Protection/Unprotection
The Advanced Sector Protection/Unprotection feature disables or enables programming or erase
operations in any or all sectors and can be implemented through software and/or hardware
methods, which are independent of each other. This section describes the various methods of
protecting data stored in the memory array. An overview of these methods in shown in Figure
Figure 9.1 Advanced Sector Protection/Unprotection
Hardware Methods
Software Methods
WP# = VIL
(Two outermost sectors
locked in large bank)
PPB Lock Bit
1,2,3
64-bit Password
(One Time Protect)
1 = PPBs Unlocked
0 = PPBs Locked
Memory Array
Sector 0
Sector 1
Sector 2
Sector N-2
Sector N-1
Sector N
3
PPB 0
PPB 1
PPB 2
PPB N-2
PPB N-1
PPB N
Persistent
Protection Bit
(PPB)
4,5
DYB 0
DYB 1
DYB 2
DYB N-2
DYB N-1
DYB N
Dynamic
Protection Bit
(DYB)
6,7,8
5. Protect effective only if PPB Lock Bit
is unlocked and corresponding PPB
is “0” (unprotected).
6. Volatile Bits.
4. PPBs programmed individually,
but cleared collectively
1. Bit is volatile, and defaults to “1” on
reset.
2. Programming to “0” locks all PPBs to
their current state.
3. Once programmed to “0”, requires
hardware reset to unlock.
3. N = Highest Address Sector.
Password Method
(DQ2)
Persistent Method
(DQ1)
相關(guān)PDF資料
PDF描述
S29CD032J1JFAN110 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CD032J1JFFN020 1M X 32 FLASH 2.7V PROM, 54 ns, PBGA80
S29CL032J0RFAI113 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
S29CL032J0RFAN130 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
S29CL032J0RFFI110 1M X 32 FLASH 3.3V PROM, 48 ns, PBGA80
相關(guān)代理商/技術(shù)參數(shù)
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S29CL032J0RFAM010 制造商:Spansion 功能描述:
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S29GL016A100BAI010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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