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參數資料
型號： S29GL032M10FFIR22
廠商： SPANSION LLC
元件分類： PROM
英文描述： Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數： 107/116頁
文件大小： 6024K
代理商： S29GL032M10FFIR22
88
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
AC Characteristics
Erase and Program Operations—S29GL032M Only
Notes:
1. Not 100% tested.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading
status data, once programming resumes (that is, the program resume command has been
written). If the suspend command was issued after tPOLL, status data is available immediately
after programming resumes. See Figure 16.
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
11
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
s
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
s
tBUSY
WE# High to RY/BY# Low
Max
90
100
110
ns
tPOLL
Program Valid before Status Polling
Max
4
s
相關PDF資料
PDF描述
S29GL032M10FFIR23 MirrorBit Flash Family
S29GL032M10FFIR30 MirrorBit Flash Family
S29GL032M10FFIR32 MirrorBit Flash Family
S29GL032M10FFIR33 CAPACITOR TANT 330UF 10V 20% SMD
S29GL032M10FFIR40 Tantalum Capacitor; Capacitance:330uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-43; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530
相關代理商/技術參數
參數描述
S29GL032M10FFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10FFIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR32 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR33 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR40 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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