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參數資料
| 型號： | S29GL032M10FFIR22 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR |
| 中文描述： | 2M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64 |
| 文件頁數： | 76/116頁 |
| 文件大?。?/td> | 6024K |
| 代理商： | S29GL032M10FFIR22 |
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60
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Command Definitions
Writing specific address and data commands or sequences into the command register initiates
incorrect address and data values or writing them in the improper sequence may place the device
in an unknown state. A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever happens first. See AC Characteristics for
timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read
mode, after which the system can read data from any non-erase-suspended sector. After com-
pleting a programming operation in the Erase Suspend mode, the system may once again read
array data with the same exception. See Erase Suspend/Erase Resume Commands for more
information.
The system must issue the reset command to return the device to the read (or erase-suspend-
read) mode if DQ5 goes high during an active program or erase operation, or if the device is in
the autoselect mode. See the next section, Reset Command, for more information.
See also Requirements for Reading Array Data in the Device Bus Operations section for more in-
formation. The Read-Only Operations–AC Characteristics provides the read parameters, and
Figure 13 shows the timing diagram.
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address
bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to the read mode. Once erasure begins, however,
the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command se-
quence before programming begins. This resets the device to the read mode. If the program
command sequence is written while the device is in the Erase Suspend mode, writing the reset
command returns the device to the erase-suspend-read mode. Once programming begins, how-
ever, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command se-
quence. Once in the autoselect mode, the reset command must be written to return to the read
mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the
device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write
the Write-to-Buffer-Abort Reset command sequence to reset the device for the next operation.
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| S29GL032M10FFIR23 | MirrorBit Flash Family |
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| S29GL032M10FFIR33 | CAPACITOR TANT 330UF 10V 20% SMD |
| S29GL032M10FFIR40 | Tantalum Capacitor; Capacitance:330uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-43; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530 |
相關代理商/技術參數 |
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| S29GL032M10FFIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FFIR30 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR32 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR33 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FFIR40 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
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