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參數(shù)資料
型號(hào)： S29GL032M10FFIR22
廠商： SPANSION LLC
元件分類： PROM
英文描述： Conductive Polymer Chip Capacitors / T530 Series - High Capacitance/Ultra-Low ESR; Capacitance [nom]: 1500uF; Working Voltage (Vdc)[max]: 2.5V; Capacitance Tolerance: +/-20%; Dielectric: Conductive Polymer; ESR: 5.0mΩ; Lead Style: Surface-Mount Chip; Lead Dimensions: 7343-43; Termination: 100% Tin (Sn); Body Dimensions: 7.3mm x 4.3mm x 4mm; Temperature Range: -55C to +125C; Container: Tape & Reel; Qty per Container: 500; Features: High Capacitance; Ultra-Low ESR
中文描述： 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù)： 80/116頁
文件大小： 6024K
代理商： S29GL032M10FFIR22
64
S29GL-M MirrorBitTM Flash Family
S29GL-M_00_B8 February 7, 2007
Data
Sheet
Figure 3. Write Buffer Programming Operation
Write “Write to Buffer”
command and
Sector Address
Write number of addresses
to program minus 1(WC)
and Sector Address
Write program buffer to
flash sector address
Write first address/data
Write to a different
sector address
FAIL or ABORT
PASS
Read DQ7 - DQ0 at
Last Loaded Address
Read DQ7 - DQ0 with
address = Last Loaded
Address
Write next address/data pair
WC = WC - 1
WC = 0 ?
Part of “Write to Buffer”
Command Sequence
Yes
No
Abort Write to
Buffer Operation?
DQ7 = Data?
DQ5 = 1?
DQ1 = 1?
Write to buffer ABORTED.
Must write “Write-to-buffer
Abort Reset” command
sequence to return
to read mode.
(Note 2)
(Note 3)
(Note 1)
Notes:
1. When Sector Address is specified, any address in
the selected sector is acceptable. However, when
loading Write-Buffer address locations with data, all
addresses must fall within the selected Write-Buffer
Page.
2. DQ7 may change simultaneously with DQ5.
Therefore, DQ7 should be verified.
3. If this flowchart location was reached because
DQ5= “1”, then the device FAILED. If this flowchart
location was reached because DQ1= “1”, then the
Write to Buffer operation was ABORTED. In either
case, the proper reset command must be written
before the device can begin another operation. If
DQ1=1, write the Write-Buffer-Programming-
Abort-Reset command. if DQ5=1, write the Reset
command.
4. See Table 34 and Table 35 for command sequences
required for write buffer programming.
相關(guān)PDF資料
PDF描述
S29GL032M10FFIR23 MirrorBit Flash Family
S29GL032M10FFIR30 MirrorBit Flash Family
S29GL032M10FFIR32 MirrorBit Flash Family
S29GL032M10FFIR33 CAPACITOR TANT 330UF 10V 20% SMD
S29GL032M10FFIR40 Tantalum Capacitor; Capacitance:330uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:10V; Package/Case:7343-43; Terminal Type:PCB SMT; ESR:0.001ohm; Packaging:Cut Tape; Series:T530
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032M10FFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
S29GL032M10FFIR30 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR32 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR33 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL032M10FFIR40 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family
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