
45
Crystal oscillator
1 OE or ST
4 GND
5 OUT
8 V
DD
NO.
1 OE
7 GND
8 OUT
14 V
DD
NO.
#14
#8
#1
#1
#4
#8
#5
#7
5
2
0
0
6
(Unit: mm)
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5
2
15.24
0.51
7.62
0.51
0.25
0.25
90
°
to
105
°
90
°
to
105
°
7.62
7.62
19.8 Max.
13.7 Max.
6
Pin terminal
Pin terminal
Note.
OE Pin (P, PTJ, PH, PTW, PHW, PCW)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is low level (weak pull - down), oscillation stops.
FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-51 series
HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-531 series
Product number (please refer to page 1)
Q32510xxxxxxx00
Q32531xxxxxxx00
Item
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Duty
Output voltage
Output load
condition (fan out)
Output enable/disable input voltage
Output
rise time
Output
fall time
Oscillation start up time
Aging
Shock resistance
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
f/f
0
Iop
I
OE
t
w
/t
V
OH
V
OL
C
L
N
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
CMOS level
TTL level
CMOS level
TTL level
CMOS level
TTL level
CMOS
TTL
Specifications
SG-51PTJ/531PTJ
SG-51P/531P
SG-51PH/531PH
26.0001 MHz to 66.6667 MHz
-0.3
V
to +7.0
V
5.0
V
±0.5
V
-55 °C to +125 °C
-20
°C
to +70
°C (
-40
°C
to +85
°C)
B: ± 50
x 10
-6
C: ±100
x 10
-6
23 mA Max.
12 mA Max.
28 mA Max.
40 % to 60 %
45 % to 55 %
V
DD
-0.4 V Min.
-0.5 V to +7.0 V
35 mA Max.
20 mA Max.
40 % to 60 %
—
V
DD
-0.4 V Min.
—
2.4 V Min.
0.4 V Max.
—
5 TTL Max.
3.5 V Min.
1.5 V Max.
—
5 ns Max.
—
5 ns Max.
50 pF Max.
10 TTL Max.
2.0 V Min.
0.8 V Max.
50 pF Max.
—
2.0 V Min.
0.8 V Max.
7 ns Max.
—
7 ns Max.
—
8 ns Max.
8 ns Max.
4 ms Max.
10 ms Max.
±5 x 10
-6
/year Max.
±20 x 10
-6
Max.
Remarks
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
B type is possible up to 55.0 MHz
No load condition
OE=GND
1/2 V
DD
level
1.4 V level
I
OH
= -400 μA (P,PTJ) /-4 mA (PH)
I
OL
= 16 mA (P) / 8 mA (PTJ) / 4mA (PH)
C
L
≤
15 pF
I
IH
=1 μA Max. (OE=V
DD
)
I
IL
= -100 μA Min. (OE=GND), PTJ: I
IL
= -500 μA Min. (OE=GND)
CMOS load: 20 %
→
80 % V
DD
TTL load: 0.4 V
→
2.4 V
CMOS load: 80 %
→
20 % V
DD
TTL load: 2.4 V
→
0.4 V
More than for 1 ms until V
DD
=0 V
→
4.5 V
Time at 4.5 V to be 0 s
Ta=+25 °C, V
DD
=5 V,first year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
2
x 0.3 ms x 1/2
sine wave in 3 directions
Note: Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
External by-pass capacitor is recommended.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
1.0250 MHz to
26.0000 MHz
Pin compatible with full-size metal can. (SG-51 series)
Pin compatible with half-size metal can. (SG-531 series)
Cylindrical AT-cut crystal unit builtin, thus assuring high reliability.
Use of CMOS IC enables reduction of current consumption.
Actual size
SG-531
SG-51