
Features
1 of 6
Optimum Technology
Matching Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SGA3463Z
DC to 5000MHz, CASCADABLE SiGe HBT
MMIC AMPLIFIER
The SGA3463Z is a high performance SiGe HBT MMIC Amplifier. A Darling-
ton configuration featuring one micron emitters provides high FT and
excellent thermal performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. Cancellation of
emitter junction non-linearities results in higher suppression of intermodu-
lation products. Only two DC-blocking capacitors, a bias resistor, and an
optional RF choke are required for operation.
0
6
12
18
24
0
123
456
Frequency (GHz)
Ga
in
(
dB)
-40
-30
-20
-10
0
Ret
urn
Los
s(dB
)
GAIN
IRL
ORL
Gain & Return Loss vs. Frequency
V
D= 2.9 V, ID= 35 mA (Typ.)
T
L=+25C
High Gain: 19dB at 1950MHz
Cascadable 50
Operates from Single Supply
Low Thermal Resistance
Package
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
DS100831
Package: SOT-363
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Small Signal Gain
20.0
21.5
23.5
dB
850MHz
19.0
dB
1950MHz
18.0
dB
2400MHz
Output Power at 1dB Compression
11.3
dBm
850MHz
11.0
dBm
1950MHz
Output Third Intercept Point
24.0
dBm
850MHz
24.6
dBm
1950MHz
Bandwidth Determined by Return
Loss
5000
MHz
>8dB
Input Return Loss
18.7
dB
1950MHz
Output Return Loss
22.4
dB
1950MHz
Noise Figure
3.2
dB
1950MHz
Device Operating Voltage
2.6
2.9
3.2
V
Device Operating Current
31
35
39
mA
Thermal Resistance
(Junction - Lead)
255
°C/W
Test Conditions: VS=5V, ID=35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=62, TL=25°C, ZS=ZL=50