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參數資料
| 型號： | SGM2013N |
| 廠商： | Sony Corporation |
| 英文描述： | GaAs N-channel Dual-Gate MES FET |
| 中文描述： | 砷化鎵N溝道雙柵場效應晶體管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 54K |
| 代理商： | SGM2013N |
GaAs N-channel Dual-Gate MES FET
For the availability of this product, please contact the sales office.
Description
The SGM2013N is an N-channel dual-gate GaAs
MES FET for UHF-band low-noise amplification. This
FET is suitable for a wide range of applications
including cellular/cordless phone.
Features
Ultra-small package
Low voltage operation
Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz
High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz
High stability
Built-in gate protection diode
Application
UHF-band high-frequency amplifier and mixer
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Allowable power dissipation
Channel temperature
Storage temperature
V
DSX
V
G1S
V
G2S
I
D
P
D
Tch
Tstg
6
V
V
V
–4
–4
18
100
125
mA
mW
°C
°C
–55 to +150
– 1 –
E97144-PS
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
SGM2013N
M-281
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